MRAL2023-3 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRAL2023-3
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRAL2023-3 is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I_C
0.5 A
V_CES
P_DISS
T_J
T_STG
θ_JC
40 V
10 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
16 ^OC/W
PACKAGE STYLE .250 2L FLG (C)
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 20 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
40
3.5
1.0
10
UNITS
V
V
mA
---
C_OB
V_CB = 22 V
f = 1.0 MHz
5
pF
P_G
η_C
8.0
V_CE = 22 V P_OUT = 3.0 W f = 2000 to 2300 MHz
8.5
45
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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