MRAL2023-18 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRAL2023-18
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL2023-18 is a
Common Base Device Designed for
Class C Amplifier Applications in L-
Band FM Microwave Links.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Input/Output Matching
MAXIMUM RATINGS
I_C
4.0 A
V_CES
42 V
P_DISS
70 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.5 °C/W
PACKAGE STYLE .250 2L FLG (C)
MINIMUM
Inches/mm
MAXIMUM
Inches/mm
A
.095/2.41
.105/2.67
B
0125/3.18
C
.380/9.65
.390/9.91
D
.780/19.81
E
.392/9.96
.408/10.36
F
.645/16.38
.655/16.64
G
.895/22.73
.905/22.99
H
.002/0.05
.006/0.15
I
.055/1.40
.065/1.65
J
.105/2.67
.130/3.30
K
.230/5.84
L
.392/.408
.408/10.36
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 160 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V I_C = 800 mA
MINIMUM TYPICAL MAXIMUM
42
3.5
4.0
10
100
P_G
η_C
7.0
V_CE = 22 V f = 2000 - 2300 MHz P_OUT = 18.0 W
35
UNITS
V
V
mA
---
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1