MRAL1720-9 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRAL1720-9
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL1720-9 is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.
FEATURES:
• Diffused Ballast Resistors.
• Internal Matching Network
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
4.0 A (CONT)
V_CES
42 V
V_EBO
3.5 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
4.5 °C/W
PACKAGE STYLE 400 4L FLG
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 80 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V I_C = 400 mA
NONE
MINIMUM TYPICAL MAXIMUM UNITS
42
V
3.5
V
2.0
mA
10
100
---
C_ob
V_CB = 28 V
f = 1.0 MHz
12
pF
G_PB
V_CE = 22 V P_out = 9.0 W f = 1.7 GHz & 2.0 GHz
6.5
dB
η_c
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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