MRA1417-6H Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRA1417-6H
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA1417-6H is a Common
Base Device Designed for Class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I_C
1.0 A
V_CBO
P_DISS
T_J
T_STG
θ_JC
50 V
19 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
9.0 ^OC/W
PACKAGE STYLE .250 2L FLG (B)
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
BV_CES
BV_EBO
I_C = 25 mA
I_C = 25 mA
I_E = 3.0 mA
h_FE
V_CE = 5.0 V I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
50
55
3.5
20
100
C_ob
V_CB = 28 V
f = 1.0 MHz
6.5
P_G
η_C
V_CE = 28 V P_OUT = 6.0 W f = 1400 - 1700 MHz
7.2
7.5
40
UNITS
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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