MRA1417-11 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRA1417-11
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-11 is a Common
Base Device Designed for Class C
Power Amplifier Applications up to 1.7
GHz.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I_C
4.0 A
V_CBO
50 V
P_DISS
12 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
4.5 °C/W
PACKAGE STYLE 250 2L FLG (C)
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 80 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V I_C = 4.0 A
MINIMUM TYPICAL MAXIMUM
50
3.5
2.0
10
100
UNITS
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
12
pF
P_G
η_C
V_CE = 28 V P_OUT = 11 W
f = 1700 MHz
7.4
45
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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