MRA0610-23 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRA0610-23
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA0610-23 is designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
from 600 MHz to 1.0 GHz, With
Internal Compensating Matching
Network and Diffused Ballast
Resistors.
MAXIMUM RATINGS
I_C
3.5 A (CONT)
V_CES
50 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
3.0 °C/W
PACKAGE STYLE .320 2L FLG
1= COLLECTOR 2= BASE 3= EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 150 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V I_C = 750 mA
NONE
MINIMUM TYPICAL MAXIMUM UNITS
50
V
3.5
V
3.0
mA
10
100
---
C_ob
V_CB = 28 V
f = 1.0 MHz
21
pF
G_PB
V_CE = 28 V P_out = 23 W f = 600 MHz & 1.0 GHz
7.0
dB
η_c
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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