MRA0610-18A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRA0610-18A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA0610-40A is Designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
From 600 MHz to 1.0 GHz, With
Internal Compensating Matching
Network and Diffused Ballast
Resistors.
MAXIMUM RATINGS
I_C
5.0 A (CONT)
V_CES
50 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.5 °C/W
PACKAGE STYLE MRA .25
MILLIMETERS INCHES
DIM MIN
MAX MIN
MAX
A
8.00
8.38
O.351 0.330
B
0.08
0.15
0.003 0.006
C
1.98
2.34
0.078 0.092
D
1.40
1.65
0.055 0.065
E
4.32
5.08
0.170 0.200
F
18.77 19.03 0.739 0.749
G
5.33
5.84
0.210 0.230
H
6.17
6.43
0.243 0.253
J
7.74
8.64
0.210 0.240
K
14.10 14.35 0.555 0.565
L
3.17
3.43
0.125 0.135
2 = Collector 1 = Emitter
3 = Base
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 100 mA
BV_EBO
I_E = 1.25 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V I_C = 500 mA
NONE
MINIMUM TYPICAL MAXIMUM UNITS
50
V
3.5
V
5.0
mA
10
100
---
C_ob
V_CB = 28 V
f = 1.0 MHz
28
pF
G_PB
V_CE = 28 V P_out = 18 W f = 600 MHz & 1.0 GHz
7.0
dB
η_c
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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