MLN1037S_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MLN1037S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1037S is Designed for
Class A Linear Applications up to 1.0 GHz.
FEATURES:
• Class A Operation
• P_G = 8.0 dB at 5.0 W/1.0 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
10 A
V_CB
60 V
V_CE
35 V
P_DISS
140 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
5.5 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
D
B^S
S
G
D
C
E
F
G
H
K
J
I
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10629
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 10 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_ob
V_CB = 28 V
f = 1.0 MHz
P_GE
V_CE = 20 V
P_OUT = 5.0 W
I_CQ = 800 mA
f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10
100
15
8.0
UNITS
V
V
V
mA
---
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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