MLN1030SS Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MLN1030SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030SS is Designed
for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
10 A
V_CB
60 V
V_CE
P_DISS
T_J
T_STG
θ_JC
35 V
140 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
20 ^OC/W
PACKAGE STYLE .205 4L STUD
D
A
C
B
G
E
H
F
#8-32UNC
J
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100
.004 / 0.100
.425 / 10.800
.200 / 5.100
.138 / 3.500
MAXIMUM
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.208 / 5.300
.006 / 0.150
.465 / 11.800
2.05 / 5.200
ORDER CODE: ASI10625
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 10 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5.0
10
100
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
5.0
pF
P_GE
V_CE = 20 V
P_OUT = 1.0 W
I_CQ = 150 mA
f = 1.0 GHz
10
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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