MLN1030SL_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MLN1030SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030SL is Designed for
Class A Linear Applications up to 1.0 GHz.
FEATURES:
• Class A Operation
• P_G = 9.0 dB at 1.0 W/1.0 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.250 A
V_CBO
40 V
V_CEO
28 V
V_EBO
3.5 V
P_DISS
7.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
θ_JC
-65 °C to +150 °C
20 °^OC/W
PACKAGE STYLE .280 4L PILL
A
S
ØB
D
G
S
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10624
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 24 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 28 V
f = 1.0 MHz
P_G
V_CE = 20 V
P_OUT = 1.0 W
I_CQ = 150 mA
f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
40
28
3.5
0.5
20
120
5.0
9.0
UNITS
V
V
V
mA
---
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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