MA40160 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – 1SCHOTTKY MIXER DIODE

MA40160
SCHOTTKY MIXER DIODE
DESCRIPTION:
The ASI MA40160 s a Silicon
medium barrier Schottky Diode
Designed for normal L.O. drive, Mixer
Applications up to 26 GHz.
FEATURES:
• Ceramic Package
MAXIMUM RATINGS
I_F
2.0 mA
V_R
3.0 V
P_DISS
75 mW @ T_C = 25 °C
T_J
-65 °C to +150 °C
T_STG
-65 °C to +150 ° C
PACKAGE STYLE 19
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_F
I_F = 2.0 mA
V_BR
I_R = 3.0 µA
MINIMUM TYPICAL MAXIMUM
200
500
3.0
UNITS
mV
V
C_J0
V_R = 0 V
f = 1 MHz
0.06
0.10
pF
NF
Z_IF
F = 16 Ghz
N_IF = 1.5 dB
P_LO = 10 dBm
F_IF = 30 KHz
250
R_L = 22 Ω
6.5
dB
450
Ohms
SRW
Peak power = 1 mW
R_L = 22 Ω
0.2
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A D V A N C E D S E M I C O N D U C T O R, I N C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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