LT3014 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

LT3014
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI LT3014 is a Common
Emitter Device Designed for General
Purpose Class A and AB Amplifier
Applications up to 1.0 GHz.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
PACKAGE STYLE .280 4L STUD
MAXIMUM RATINGS
I_C
300 mA
V_CB
P_DISS
T_J
T _STG
θ _JC
45 V
5.0 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
33.0 ^OC/W
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
V_BE = 0 V
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 100 mA
PG
V_CE = 20 V
ICQ = 150 mA
f = 1.0 GHz
P1dB
V_CE = 20 V
ICQ = 150 mA
f = 1.0 GHz
IP3
V_CE = 20 V
ICQ = 150 mA
f = 1.0 GHz
POUT = 10 dBm (2 EQUAL TONES)
C_ob
V_CB = 28 V
f = 1.0 MHz
f_t
V_CE = 20 V
ICQ = 150 mA
f = 1.0 GHz
NONE
MINIMUM TYPICAL MAXIMUM
22
50
3.5
20
200
3.0
3.5
27
29
48
2.0
3.0
3.0
3.5
UNITS
V
V
V
---
GHz
dBm
dBm
pF
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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