HXTR5104 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – LINEAR POWER TRANSISTOR

HXTR5104
LINEAR POWER TRANSISTOR
DESCRIPTION:
The ASI HXTR5104 is a Common
Base Device Designed for high
poutput power and gain at VHF, UHF,
and microwave frequency applications.
FEATURES INCLUDE:
• High Gain
• Hermetic package
• High power output
MAXIMUM RATINGS
I
C
V
CBO
V_CEO
250 mA
45 V
27 V
P_DISS
4.0 W @ T_C = 25 °C
T
J
T
STG
θ_JC
-65 °C to+200 °C
-65 °C to+200 °C
44 °C/W
PACKAGE STYLE 100 4L
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 100 µA
I_EBO
V_EB = 2.0 V
I_CES
V_CE = 32 V
I_CBO
V_CB = 20 V
H_FE
V_CE = 18 V
I_C = 110 mA
C_CB
V_CB = 10
f = 1.0 MHz
P_1dB
G_1dB
η
V_CE = 18 V
I_C = 110 mA
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
40
24
3.3
10
200
100
15
85
UNITS
V
V
V
µA
nA
nA
---
0.70
pF
28
29
8.0
9.0
35
dBm
dBm
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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