HSCH5531 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – BEAM LEAD SCHOTTKY DIODE

HSCH5531
BEAM LEAD SCHOTTKY DIODE
DESCRIPTION:
The ASI HSCH5531 is a Low Barrier
Beam Lead Schottky Diode Designed
for K-Band Mixer Applications.
MAXIMUM RATINGS
I_F
25 mA
V_R
4.0 V
P_DISS
150 mW @ T_A = 25 °C
T_J
-65 °C to +175 °C
T_STG
-65 °C to +200 °C
PACKAGE STYLE 711
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
V_F
I_F = 1.0 mA
∆V_F
I_F = 1.0 mA
I_R
V_R = 1.0 V
R_D
I_F = 5.0 mA
∆R_D
I_F = 5.0 mA
C_T
∆C_T
TSS
γ
R_V
V_R = 0 V
V_R = 0 V
Zero Bias, Zero Bias,
P_IN = -30 dBm
Video Badwidth = 2.0 MHz
f = 1.0 MHz
f = 1.0 MHz
f = 10 GHz
R_L = 10 MΩ
NONE
MINIMUM
4.0
TYPICAL
MAXIMUM
375
10
100
20
3.0
0.10
0.02
-46
17
1.4
UNITS
V
mV
mV
nA
Ω
Ω
pF
pF
dBm
mV/µW
MΩ
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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