HFT150-50 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – N-Channel Enhancement Mode HF POWER MOSFET

HFT150-50
HF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The HFT150-50 is Designed for
General Purpose Class B Power
Amplifier Applications Up to 100 MHz.
FEATURES:
• P_G = 20 dB Typ. at 150 W/30 MHz
• η _D = 50% Typical at 150 W/30 MHz
• Omnigold™ Metalization
MAXIMUM RATINGS
I_D
V_DSS
V_GS
P_DISS
T_J
T _STG
θ _JC
16 A
125 V
± 30 V
300 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.6 ^OC/W
PACKAGE STYLE .500 4L FLG
.112x45° L
A
FULL R
S
D
C
B
G
S
E
H
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
L
.980 / 24.89
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10617
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
g_fs
I_D = 50 mA
V_DSS = 50 V
V_GS = 20 V
V_DS = 10 V
V_DS = 10 V
V_GS = 0 V
V_GS = 0 V
V_DS = 0 V
I_D = 100 mA
I_D = 5.0 A
NONE
MINIMUM TYPICAL MAXIMUM
125
5.0
1.0
1.0
5.0
3.5
UNITS
V
mA
µA
V
S
C_iss
300
C_oss
C_rss
V_DS = 50 V
V_GS = 0 V
f = 1.0 MHz
150
30
pF
G_ps
V_DD = 50 V I_DQ = 250 mA P_OUT = 150W (PEP)
η_D
F_O = 30 & 30.001 MHz
ψ
VSWR 30:1 @ all phase angles
16
20
dB
45
50
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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