HFT150-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HFT150-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HFT150-28 is Designed for
FEATURES:
• P_G = 16 dB min. at 150 W/30 MHz
• IMD₃ = -28 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
16 A
V_(BR)DSS
65 V
V_GS
P_DISS
T_J
T _STG
θ _JC
± 40 V
300 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.60 ^OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
C
B
.112x45° L
Ø.125 NOM.
E
H
D
GF
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
D
.720 / 18.28
.255 / 6.48
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
J
.150 / 3.81
.110 / 2.79
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10616
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
V_GS = 0 V
I_DS = 100 mA
I_DSS
V_GS = 0 V
V_DS = 28 V
I_GSS
V_GS = 20 V
V_DS = 0 V
V_GS
V_DS = 10 V
I_D = 100 mA
V_DS
V_GS = 10 V
I_D = 10 A
G_FS
V_DS = 10 V
I_D = 5 A
MINIMUM TYPICAL MAXIMUM
65
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0.5
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1.0
1.0
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5.0
---
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1.5
3.5
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UNITS
V
mA
µA
V
V
mho
C_ISS
C_OSS
C_RSS
V_GS = 28 V
375
V_DS = 0 V
F = 1.0 MHz
---
188
---
pF
26
P_IN
G_PS
V_DD = 28 V I_DQ = 250 mA
f = 175 MHz
P_OUT = 150 W (PEP)
15
W
10
dB
η
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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