HF75-50S_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF75-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF75-50S is 50 V Class AB NPN
Power transistor, designed for SSB &
VHF Communacations.
FEATURES INCLUDE:
• Direct Replacement for TH513
• High Gain, 16 dB Typical @ 30 MHz
• Withstands Server Mismatch
• Omnigold™ Metalization System
• 75 W P_OUT
• 50 V OPERATIONS
MAXIMUM RATINGS
I_C
3.25 A
V_CB
110 V
V_CE
55 V
V_EB
P_DISS
T_J
T_STG
θ_JC
4.0 V
127 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.0 ^OC/W
PACKAGE STYLE .380” 4L STUD
.112x45°
A
C
B
E
E
ØC
B
D
#8-32 UNC-2A
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
M A X IM U M
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 100 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 6.0 V I_C = 1.4 A
C_ob
V_CB = 50 V
f = 1.0 MHz
G_PE
η_C
IMD₃
V_CC = 50 V
P_IN = 3.0 W
P_OUT = 75 WPEP
f₁ = 30.000 MHz, f₂ = 30.001 MHz
MINIMUM TYPICAL MAXIMUM
110
55
4.0
19
50
100
14
37
-30
UNITS
V
V
V
---
pF
dB
%
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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