HF75-12 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF75-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF75-12 is Designed for 12.5 Volt
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
• Replacement for MRF454 & SD1405
• P_G = 18 dB Typical @ 30MHz & 75W
• Withstands 20:1 Load VSWR
PACKAGE STYLE .500" 4L FLANGE
MAXIMUM RATINGS
I_C
20 A
V_CB
36 V
V_CE
18 V
V_EB
P_DISS
T_J
T _STG
θ _JC
4.0 V
270 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.65 ^OC/W
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
BV_CBO
I_C = 50 mA
36
BV_CES
I_C = 100 mA
36
BV_CEO
I_C = 100 mA
18
BV_EBO
I_E = 10 mA
4.0
I_CES
V_CE = 15 V
15
h_FE
V_CE = 5.0 V
I_C = 5.0 A
20
200
C_OB
V_CB = 12.5 V
f = 1.0 MHz
350
G_PE
13
14
IMD₃
V_CC = 12.5 V
I_CQ = 100 mA
P_OUT = 75 W(PEP)
-30
η_C
f = 30.000 & 30.001 MHz
55
UNITS
V
V
V
V
mA
---
pF
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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