HF50-12F_1 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF50-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF50-12F is a 12.5 V Class
C epitaxial silicon NPN transistor
designed primarily for land mobile
transmitter applications. This device
utilizes emitter ballasting, is extremely
suitable and capable of withstanding
high VSRW under operating
conditions.
FEATURES:
• P_G = 16 dB min. at 50 W/30 MHz
• IMD₃ = -30 dBc max. at 50 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
12.0 A
V_CBO
45 V
V_CEO
18 V
V_EBO
3.5 V
P_DISS
183 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.05 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10596
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 100 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
45
40
18
3.5
10
10
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UNITS
V
V
V
V
mA
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without
REV. C
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