HF50-12 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF50-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF50-12 is Designed for 12.5 Volt
Class AB and Class C Power Amplifier
Applications Operating in the 2 to 32
MHz HF Band.
FEATURES INCLUDE:
• High Gain, 16 dB Typical @ 30 MHz
• Emitter Ballasting
• Withstands Severe Mismatch
MAXIMUM RATINGS
I_C
10 A
V_CB
36 V
V_CE
18 V
V_EB
P_DISS
T_J
T _STG
θ _JC
4.0 V
175 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.0 ^OC/W
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
BV_CES
I_C = 100 mA
36
BV_CEO
I_C = 100 mA
18
BV_EBO
I_E = 10 mA
4.0
I_CES
V_CE = 15 V
10
h_FE
V_CE = 5.0 V
I_C = 5.0 A
20
C_ob
V_CB = 12.5 V
f = 1.0 MHz
200
G_PE
15
16
η
V_CC = 12.5 V I_CQ = 50 mA
P_OUT = 50 W(PEP)
55
IMD
f = 30 MHz
-30
UNITS
V
V
V
mA
---
pF
dB
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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