HF30-28F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF30-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28F is Designed for
FEATURES:
• P_G = 20 dB min. at 30 W/30 MHz
• IMD₃ = -30 dBc max. at 30 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
5.0 A
V_CBO
65 V
V_CEO
35 V
V_EBO
P_DISS
T_J
T _STG
θ _JC
4.0 V
60 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.9 ^OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10604
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CES
I_C = 200 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 30 V
I_CBO
V_CE = 30 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
10
1.0
5
200
UNITS
V
V
V
V
mA
mA
---
C_OB
V_CB = 30 V
f = 1.0 MHz
65
pF
G_P
V_CE = 28 V
P_IN = 7.0 W
f = 175 MHz
7.6
dB
η_C
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1