HF250-50_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF250-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF250-50 is a 50 V epitaxial
silicon NPN transistor, designed for
SSB communications.
FEATURES:
• P_G = 14 dB min. at 250 W/30 MHz
• IMD₃ = 150 dBc max. at 250 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
40 A
V_CBO
110 V
V_CEO
55 V
V_EBO
4.0 V
P_DISS
140 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.40 °C/W
PACKAGE STYLE 0.550 4L FLG
E
C
B
E
ORDER CODE: ASI10615
CHARACTERISTICS T_C = 25° C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_C = 200 mA
BV_EBO
I_E = 20 mA
I_CEO
V_CE = 30 V
I_CES
V_CE = 60 V
h_FE
V_CE = 6.0 V
I_C = 10 A
MINIMUM TYPICAL MAXIMUM
55
110
4.0
10
10
15
45
UNITS
V
V
V
mA
mA
---
C_ob
V_CB = 50 V
f = 1.0 MHz
360
pF
G_P
IMD₃
η_C
V_CE = 50 V
I_CQ = 150 mA P_OUT = 250 W(PEP)
14.5
37
dB
-30
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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