HF250-50 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF250-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF250-50 is Designed for
FEATURES:
• P_G = 14 dB min. at 220 W/30 MHz
• IMD₃ = 150 dBc max. at 220 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
40 A
V_CBO
110 V
V_CEO
55 V
V_EBO
P_DISS
T_J
T _STG
θ _JC
4.0 V
140 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.40 ^OC/W
PACKAGE STYLE 0.500 4L FLG
A
FULL R
.112x45° L
E
C
Ø.125 NOM.
C
B
B
E
E
H
D
GF
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
D
.720 / 18.28
.255 / 6.48
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
J
.150 / 3.81
.110 / 2.79
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10615
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_C = 200 mA
BV_EBO
I_E = 20 mA
I_CEO
V_CE = 30 V
I_CES
V_CE = 60 V
h_FE
V_CE = 6.0 V
I_C = 10 A
MINIMUM TYPICAL MAXIMUM
55
110
4.0
10
10
15
45
UNITS
V
V
V
mA
mA
---
C_ob
V_CB = 50 V
f = 1.0 MHz
360
pF
G_P
IMD₃
η_C
V_CE = 50 V
I_CQ = 150 mA P_OUT = 250 W(PEP)
14.5
37
dB
-30
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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