HF220-28_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF220-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF220-28 is 28 V epitaxial
planar transistor, designed for SSB
and VHF communications. The device
utilizes emitter ballasting for improved
ruggedness and reliability.
FEATURES:
• P_G = 12 dB min. at 220 W/30 MHz
• IMD₃ = -30 dBc max. at 220 W(PEP)
• Omnigold™ Metalization System
• 30 MHz @ 28 V operations
• IMD –30 dBc
MAXIMUM RATINGS
I_C
16 A
V_CBO
70 V
V_CEO
35 V
V_EBO
4.0 V
P_DISS
320 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
A
FULL R
.112x45°
L
E
C
C
B
E
H
B
E
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10609
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 20 mA
I_CEO
V_CE = 30 V
I_CES
V_CE = 35 V
h_FE
V_CE = 5.0 V
I_C = 7.0 A
MINIMUM TYPICAL MAXIMUM
35
70
4.0
5.0
5.0
15
60
UNITS
V
V
V
mA
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
---
450
---
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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