HF20-12F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

HF20-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF20-12F is Designed for 12.5 V
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
• Replacement for MRF433 & SD1285
• P_G = 18 dB Typical at 30MHz & 20W
• Withstands 20:1 Load VSWR
MAXIMUM RATINGS
I_C
4.5 A
V_CB
36 V
V_CE
18 V
V_EB
P_DISS
T_J
T _STG
θ _JC
4.0 V
80 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.2 ^OC/W
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
BV_CBO
I_C = 50 mA
36
BV_CES
I_C = 50 mA
36
BV_CEO
I_C = 50 mA
18
BV_EBO
I_E = 5.0 mA
4.0
I_CES
V_CE = 15 V
5
h_FE
V_CE = 5.0 V
I_C = 1.0 A
10
200
C_OB
V_CB = 12.5 V
f = 1.0 MHz
100
G_PE
V_CC = 12.5 V
I_CQ = 25 mA
P_OUT = 20 W (PEP)
15
18
IMD₃
η_C
f = 30.000 & 30.001 MHz
-30
55
UNITS
V
V
V
V
mA
pF
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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