FMB150_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

FMB150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB150 is a high power
transistor designed for FM broadcast
system in 88-108 MHz range. It has
diffused ballasting resistor to improve
MTBF and high VSWR capability.
FEATURES:
• Class C, CE mode 28 V Operation
• P_G = 9.0 dB at 150 W/108 MHz
• Omnigold™ Metalization System
• High VSWR capability
MAXIMUM RATINGS
I_C
16 A
V_CBO
55 V
V_EBO
4.0 V
P_DISS
165 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.06 °C/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FULL R
E
C
C
B
B
E
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10588
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 20 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
55
25
4.0
20
UNITS
V
V
V
---
C_OB
V_CB = 28 V
f = 1.0 MHz
140
pF
P_G
V_CC = 28 V
P_OUT = 150 W
η_C
f = 108 MHz
9.0
10
65
dB
%
VSWR
3:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. D
1/2