FH1100 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON DIODE

SILICON DIODE
FH1100
DESCRIPTION:
The ASI FH1100 is a Silicon Diffused
Hot Carrier Diode.
FEATURES INCLUDE:
• Q_S = 1.6 pC Typ.
• C = 1.0 pF Max. @ f = 890 MHz
• Hermetic Glass Package
MAXIMUM RATINGS
I_F
10 mA
V_R
5.0 V
P_DISS 100 mW @ T_C = 25 °C
T_J
-65 °C to +125 °C
T_STG
-65 °C to +150 °C
T_soldering +260 °C for 5 Seconds
PACKAGE STYLE DO-7
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_F
I_F = 10 mA
I_R
V_R = 1.0 V
V_BR
I_R = 100 µA
C_T0
V_R = 0 V
f = 1.0 MHz
NF
Q_S
I_F = 10 mA
f = 890 MHz
MINIMUM
5.0
TYPICAL MAXIMUM
550
1.0
UNITS
mV
µA
V
1.0
pF
10
dB
1.6
pC
A D V A N C E D S E M I C O N D U C T O R, I N C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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