DV2805 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET N-Channel Enhancement Mode

DV2805
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI DV2805 is Designed for
General Purpose Class A, B, or C
Power Amplifier Applications up to 175
MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
• P_G = 04 dB Typ. at 5.0 W /175MHz
• 20-35 V operation
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
0.5 A
V_(BR)DSS
80 V
V_DGR
80 V
V_GS
± 20 V
P_DISS
10 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
17.6 °C/W
.112 x 45°
B
S
A
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
V_GS = 0 V
I_DS = 5.0 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 40 V
V_GS
V_DS = 10 V
I_D = 25 mA
G_M
V_DS = 0.28 V
I_D = 150 mA
MINIMUM TYPICAL MAXIMUM
80
---
---
---
---
2.0
---
---
1.0
1.0
---
6.0
50
---
---
UNITS
V
mA
µA
V
mmho
C_iss
C_oss
C_rss
V_GS = 28 V
V_DS = 0 V
F = 1.0 MHz
22
15
17
15
pF
3.0
2.0
P_G
V_DD = 28 V
I_DQ = 25 mA
P_OUT = 5.0 W
9.0
10
dB
η_D
f = 175 MHz
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1