DKV6533C Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON HYPERABRUPT VARACTOR DIODE

DKV6533C
SILICON HYPERABRUPT VARACTOR DIODE
DESCRIPTION:
The DKV6533C is designed for UHF
Filter and Oscillator Applications that
Require Octave tuning.
FEATURES:
• T_R = 4.6 Min. at V_R = 3 /20 V
• Q = 450 Min. at 3 V /50 MHz
• Hermetic DO-7 Package
MAXIMUM RATINGS
I_F
50 mA
V_R
P_DISS
T_J
T_STG
22 V
250 mW @ T_C = 25 ^OC
-55 ^OC to + 125 ^OC
-55 ^OC to +175 ^OC
PACKAGE STYLE DO-7
1.000” min.
2 places
.230”
.300”
FINISHES
Body : Blue
Cathode Band : Black
Leads : Tin plated
.018”
.022”
.085”
.107”
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
I_R
V_R = 20 V
V_R = 3.0 V
C
T
V_R = 8.0 V
V_R = 20 V
f = 1.0 MHz
T_R
V_R = 3 & 20 V
Q
V_R = 3.0 V
f = 1.0 MHz
f = 50 MHz
MINIMUM
22
10.5
4.3
2.0
4.6
450
NONE
TYPICAL MAXIMUM
100
12.5
5.7
2.3
6.3
UNITS
V
nA
pF
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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