DKV6510-12 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON HYPERABRUPT VARACTOR DIODE

DKV6510-12
SILICON HYPERABRUPT VARACTOR DIODE
DESCRIPTION:
The ASI DKV6510-12 is an Ion
Implanted Silicon Hyperabrupt Varactor
Diode Designed for Octave Tuning up
to 500 MHz.
FEATURES INCLUDE:
• Large Tuning Ratio – 14:1 Typ.
• High Q – 700 Typ.
• Hermetic Glass DO-7 Package
PACKAGE STYLE DO-7
MAXIMUM RATINGS
I_F
100 mA
V_R
P_DISS
T_J
T _STG
12 V
400 mW @ T_C = 25 ^OC
-55 ^OC to +150 ^OC
-65 ^OC to +200 ^OC
NONE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
I_R
V_R = 10 V
MINIMUM
12
C_T2
V_R = 2.0 V
C_T10
V_R = 10 V
f = 1.0 MHz
45
f = 1.0 MHz
4.0
C_T2/ C_T10
Q
V_R = 2 & 10 V
V_R = 2.0 V
f = 1.0 MHz
f = 1.0 MHz
10.0
200
TYPICAL
700
MAXIMUM
100
75
7.0
17.0
UNITS
V
µA
pF
pF
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Specifications are subject to change without notice.
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