D10-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

D10-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI D10-28 is Designed for
General Purpose UHF Amplifier
Applications up to 1200 MHz.
FEATURES:
• P_G = 5.2 dB Typ. at 10 W/960 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
1.0 A
V_CEO
30 V
P_DISS
20 W @ T_C = 25 °C
T_J
-65 to +200 °C
T_STG
θ_JC
-65 to +150 °C
8.8 ^OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
B_E
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_CB
V_CB = 28 V
f = 1.0 MHz
P_G
η_C
V_CE = 28 V
P_OUT = 10 W
f = 960 MHz
MINIMUM TYPICAL MAXIMUM
30
50
4.0
250
15
150
UNITS
V
V
V
µA
---
12
pF
5.2
dB
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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