CD2397 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CD2397
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CD2397 is a common base
NPN Bipolar Microwave Transistor. It
is designed for Pulse Applications
within the 960 to 1215 MHz Avionics
frequency range.
FEATURES:
• Common Base Pulse at 43V
• All gold metallization with emitter
ballast resistors for maximum reliability
and superior ruggedness.
• DME Cycle. Internal input Matched.
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
5.0 A
V_CES
50 V
V_EBO
4.0 V
P_DISS
300 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.60 °C/W
PACKAGE STYLE .230 2L FLG
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 15 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 200 mA
η_C
P_OUT
V_CC = 43 V
PW = 10 µS
P_IN = 27 W
f = 1090 MHz
MINIMUM TYPICAL MAXIMUM
50
4.0
10
40
150
UNITS
V
V
---
%
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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