CD2315 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CD2315
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CD2315 is designed for
broadband amplifier applications in
commercial and amateur
communication equipment.
FEATURES:
• P_G = 18 dB min. at 75 W/30 MHz
• IMD₃ = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
10 A
V_CB
60 V
V_CE
35 V
P_DISS
140 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.05 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
2
1
3
2
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
1 = Collector 2 = Emitter 3 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 10 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10
100
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
80
pF
G_PE
V_CE = 25 V
I_CQ = 3.2 A
f = 225 MHz
13.5
14.5
dB
IMD₃
P_REF = 16 W
Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
-55
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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