CBSL6_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CBSL6
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL6 is a gold metalized
epitaxial silicon NPN transistor,
designed for high linearity Class-AB
cellular base station applications. It
also operates in Class-C.
FEATURES:
• Internal Input Matching Network
• 850-960MHz
• P_G = 10 dB at 6.0 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.4 A
V_CBO
50 V
V_CES
35 V
V_EBO
3.5 V
P_DISS
53 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
3.3 °C/W
PACKAGE STYLE .230 6L FLG
.040x45° ^C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
DIM
M IN IM U M
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10580
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 5.0 mA
BV_EBO
I_E = 5.0 mA
I_CEO
V_CE = 24 V
I_CBO
V_CB = 24 V
h_FE
V_CE = 10 V
I_C = 0.1 A
C_OB
V_CB = 24 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
24
50
3.5
1.0
1.0
20
100
7.5
8.5
UNITS
V
V
V
mA
mA
---
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
1/2