CBSL60B_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CBSL60B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL60B is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
FEATURES:
• Internal Input/Output Matching Networks
• P_G = 8.5 dB at 60 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.0 A
V_CBO
60 V
V_CEO
28 V
V_EBO
3.5 V
P_DISS
146 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.2 °C/W
PACKAGE STYLE .450 BAL FLG (A)
.060x45°
C
E
D
F
B
A
FULL R
.100x45°
P
G
H
J
K
MN
L
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.055 / 1.40
B
.120 / 3.05
.130 / 3.30
C
.785 / 19.94
D
.455 / 11.56
.465 / 11.81
E
.120 / 3.05
.130 / 3.30
F
.230 / 5.84
G
.838 / 21.28
.850 / 21.59
H
1.095 / 27.81
1.105 / 28.07
J
.525 / 13.34
.535 / 13.59
K
.002 / 0.05
.005 / 0.15
L
.055 / 1.40
.065 / 1.65
M
.080 . 2.03
.095 / 2.41
N
.195 / 4.95
P
.445 / 11.30
.455 / 11.56
ORDER CODE: ASI10584
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 20 mA
I_CEO
V_CE = 25 V
h_FE
V_CE = 5.0 V
I_C =3.0 A
MINIMUM TYPICAL MAXIMUM
60
28
3.5
30
25
80
UNITS
V
V
V
mA
---
P_G
V_CC = 26 V I_CQ = 2 X 200 mA
f = 960 MHz
8.5
P_OUT = 60 W
dB
VSRW
V_CC = 26 V
f = 960 MHz
5:1
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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