CBSL30B Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CBSL30B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL30B is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
5.0 A
V_CBO
48 V
V_CES
45 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
43 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
3.0 ^OC/W
PACKAGE STYLE .250 BAL FLG
A
B
.020 x 45°
Ø.130 NOM.
.050 x 45°
E
C
D
N
F
J
G
H
I
LM
K
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 1.91
.245 / 6.22
.060 / 1.52
.125 / 3.18
.092 / 2.34
MAXIMUM
inches / mm
.065 / 1.65
.255 / 6.48
.670 / 17.01
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.257 / 6.53
ORDER CODE: ASI10583
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CEO
I_C = 20 mA
BV_EBO
I_E = 5 mA
I_CBO
V_CB = 24 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
48
50
---
25
30
---
3.5
4.0
---
1.0
20
100
UNITS
V
V
V
mA
---
C_OB
V_CB = 24 V
f = 1.0 MHz
25
pF
P_G
V_CC = 24 V
I_CQ = 2 X 75 mA f = 960 MHz
7.5
P_OUT = 30 W
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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