CBSL30 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CBSL30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The ASI CBSL30 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
.040x45° ^C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
MAXIMUM RATINGS
I_C
V_CBO
V_CEO
V_EBO
P_DISS
T_J
T_STG
θ_JC
7.5 A
48V
25 V
3.5 V
88 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
3.0 ^OC/W
DIM
MINIMUM
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10582
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CER
I_C = 40 mA
R_BE = 150 Ω
BV_CEO
I_C = 40 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CE = 24 V
h_FE
V_CE = 20 V
I_C = 2.0 A
MINIMUM TYPICAL MAXIMUM
48
55
---
30
40
---
25
28
---
3.5
5.0
---
10
---
---
15
40
100
C_OB
V_CB = 25 V
f = 1.0 MHz
50
P_G
IMD₃
VSWR₁
VSWR₂
OVD
V_CE = 25 V
P_OUT = 30 W
I_CQ = 150 mA
f₁ = 860.0 MHz
f = 860 MHz
f₂ = 860.1 MHz
V_CE = 25 V
V_CE = 25 V ± 20%
VSWR = 20:1
VSWR = 10:1
V_CE = 25 V ± 20%
VSWR = 5:1
P_IN = P_IN (norm) +3 dB
V_CE = 25 V
V_CE = 25 V ± 20%
P_IN (norm) = +5 Db
P_IN (norm) = +3 dB
7.5
---
-35
No Degradation in
Output Device
No Degradation in
Output Device
No Degradation in
Output Device
UNITS
V
V
V
mA
---
pF
dB
dBc
Typ.
Typ.
Typ.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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