CBSL100 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CBSL100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL100 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
25 A
V_CBO
60 V
V_CEO
30 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.0 V
310 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.6 ^OC/W
PACKAGE STYLE .400 BAL FLG (C)
.080x45°
A
B
FULL R
(4X).060 R
E
D
C
.1925
I
F
G
H
N
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.220 / 5.59
.120 / 3.05
.380 / 9.65
.780 / 19.81
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
.210 / 5.33
.435 / 11.05
1.090 / 27.69
.395 / 10.03
.850 / 21.59
M
L
JK
MAXIMUM
inches / mm
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10585
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 50 mA
I_CES
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 3.0 A
MINIMUM TYPICAL MAXIMUM
60
30
3.0
10
15
70
UNITS
V
V
V
mA
---
P_G
V_CE = 24 V
I_CQ = 2 X 100 mA f = 960 MHz
9.0
IMD
η_C
P_OUT = 100 W
-32
45
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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