CBSL1 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

CBSL1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL1 is Designed for UHF
Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
• Pg = 10 dB min. @ 960 MHz
• P_1dB = 1.0 Watts min. at 960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.25 A
V_CBO
40 V
V_CEO
28 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.5 V
7.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
25 ^OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
B_E
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10577
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 24 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
40
25
3.5
500
20
120
UNITS
V
V
V
µA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
5.0
pF
P_G
P_1dB
V_CC = 24 V
I_CQ = 125 mA
f = 960 MHz
10
1.0
dB
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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