C3-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

C3-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The C3-28 is Designed for Class A, B
and C Power Amplifier Applications Up
to 500 MHz.
FEATURES:
• P_G = 13 dB Typ. at 3.0 W/400 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
1.0 A
V_CB
P_DISS
T_J
T _STG
θ _JC
45 V
12 W @ T_C = 25 ^OC
-65 to +200 ^OC
-65 to +150 ^OC
15 ^OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
B_E
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10810
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
BV_CER
BV_EBO
I_CBO
h_FE
I_C = 5 mA
I_C = 20 mA
I_E = 5 mA
V_CE = 28 V
V_CE = 5.0 V
R_BE = 10 Ω
I_C = 100 mA
NONE
MINIMUM TYPICAL MAXIMUM
45
45
3.5
500
15
150
UNITS
V
V
V
µA
---
F_t
V_CE = 20 V
I_C = 100 mA
C_ob
V_CB = 28 V
600
f = 1.0 MHz
MHz
7.0
pF
P_G
η_C
V_CE = 28 V
P_OUT = 3.0 W
12
f = 400 MHz
50
13
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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