C1-28 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

C1-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The C1-28 is Designed for 28 Volt
Class C Amplifier Applications up to
500 MHz.
FEATURES:
• P_G = 12 dB Typ. at 1.0 W/400 MHz
• η _C = 65 % Typ. at 1.0 W/400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
250 mA
V_CBO
40 V
V_CEO
28 V
V_EBO
P_DISS
T_J
T _STG
θ _JC
3.5 V
7.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
20 ^OC/W
PACKAGE STYLE .280 4L PILL
A
E
ØB
C
E
B
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10791
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 5.0 mA
BV_CES
I_C = 5.0 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 28 V
MHz
f = 1.0
MINIMUM TYPICAL MAXIMUM
50
50
4.0
500
20
120
UNITS
V
V
V
µA
---
3.5`
5.0
pF
P_G
η_C
V_CE = 28 V
P_OUT = 1.0 W
f = 400 MHz
10
60
12
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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