BM30-12 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BM30-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BM30-12 is Designed for
VHF land mobil applications in the 150-
175 MHZ range.
FEATURES:
• Common Emitter
• P_OUT = 30 W at175 MHz
• Omnigold™ Metalization System
• Internal Matching network
MAXIMUM RATINGS
I_C
8.0 A
V_CES
36 V
V_CEO
18 V
V_EBO
4.0 V
P_DISS
65 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
2.7 °C/W
PACKAGE STYLE .500 6L FLG
C
A
C
E
D
2x ØN
FULL R
E
B
B
E
.725/18,42
G
F
H
JI
M
K
L
DIM
M IN IM U M
inches / mm
M A X IM U M
inches / mm
A
.150 / 3.43
.160 / 4.06
B
.045 / 1.14
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
H
.125 / 3.18
I
.725 / 18.42
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
M
.285 / 7.24
N
.120 / 3.05
.135 / 3.43
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 20 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 5.0 mA
MINIMUM TYPICAL MAXIMUM
36
18
4.0
UNITS
V
V
C_ob
V_CB = 12.5 V
f = 1.0 MHz
110
pF
P_OUT
P_IN
V_CC = 12.5 V
P_OUT = 40 W
f = 175 MHz
30
4.5
W
W
η_C
60
%
Z_IN
P_OUT = 30 W
Z_L
f = 175 MHz
1.0 + j1.4
Ω
1.75 + j0.5
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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