BM100-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BM100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BM100-28 is Designed for high
power VHF Applications up to 200 MHz.
FEATURES:
• Common Emitter
• P_G = 8.5 dB at 20 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CEO
33 V
V_CES
65 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
270 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.65 ^OC/W
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE 3&4 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
33
65
4.0
10
UNITS
V
V
V
---
C_CB
V_VB = 28 V
f = 1.0 MHz
200
pF
P_G
V_CC = 28 V
P_OUT = 100 W
f = 175 MHz
8.5
η_C
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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