BLY92C Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLY92C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The BLY92C is Designed for
Class C FM Amplifier Applications
up to 250 MHz.
FEATURES:
• P_G = 11 dB Typical at 175 MHz
• High Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
4.0 A
V_CB
65 V
V_CE
35 V
V_EB
P_DISS
T_J
T_STG
θ_JC
4.0 V
40 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
4.4 ^OC/W
PACKAGE STYLE .380" 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
ORDER CODE: ASI10758
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 200 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
65
35
4.0
2.0
35
UNITS
V
V
V
mA
---
C_ob
V_CB = 30 V
f = 1.0 MHz
40
50
pF
P_G
η_C
V_CC = 28 V
P_OUT = 15 W
10
f = 175 MHz
50
11
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1