BLY91C Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLY91C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY91C is Designed for
28 V Large Signal Class A,B and C
Amplifier Applications up to 175 MHz.
FEATURES INCLUDE:
• Emitter Ballasting
• Gold Metalization
• 3/8" SOE Stud Package
MAXIMUM RATINGS
I_C
1.0 A
V_CE
35 V
V_CB
65 V
P_DISS
20 W @ T_C = 25 °C
T_J
-65 °C to + 200 °C
T_STG
-65 °C to + 150 °C
θ_JC
8.7 °C/W
PACKAGE STYLE .380" 4L STUD
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 200 mA
BV_CEO
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 36 V
h_FE
V_CE = 5.0 V
I_C = 400 mA
C_OB
V_CB = 30 V
f = 1.0 MHz
P_G
η_C
V_CC =28 V
P_OUT = 8.0 W
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.0
10
100
UNITS
V
V
V
mA
---
15
pF
12.0
13.0
dB
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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