BLY91A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON POWER TRANSISTOR

BLY91A
NPN SILICON POWER TRANSISTOR
DESCRIPTION:
The ASI BLY91A is Designed for
28 V Class A, B and C Transmitter
Applications.
MAXIMUM RATINGS
I_C
750 mA
2.25 A (PEAK) f = ≥1.0 MHz
V_CE
36 V
V_CB
P_DISS
T_J
T_STG
θ_JC
65 V
17.5 W @ T_mb = 25 ^OC
-30 ^OC to +200 ^OC
-30 ^OC to +200 ^OC
9.4 ^OC/W
PACKAGE STYLE SOT- 48 TYPE
ALL DIMENSIONS IN INCHES
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CEO
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
36
65
4.0
5.0
5.0
UNITS
V
V
V
mA
---
C_ob
V_CB = 30 V
f_t
V_CE = 20V
I_C = 400 mA
f = 1.0 MHz
f = 500 MHz
10
15
pF
500
MHz
G_P
12
dB
P_L
V_CC = 28 V
I_C = ≤ 0.4 A
f = 175 MHz
8.0
W
η
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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