BLX93A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLX93A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX93A is Designed for
transmitting applications in class-A, B
or C with a supply voltage up to 28 V
FEATURES:
• High Gain - 9.0 dB
• Omnigold™ Metallization System
• Common Emitter
MAXIMUM RATINGS
I_C
1.0 A
V_CB
65 V
P_DISS
12.5 W @ T_C = 25 °C
T_J
-65 to +200 °C
T_STG
-65 to +150 °C
θ_JC
9.8 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
B_E
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CES
I_C = 10 mA
BV_CEO
I_C = 25 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 100 mA
F_T
V_CE = 5.0 V
I_C = 200 mA
C_c
V_CB = 10 V
C_e
V_EB = 0 V
f = 1.0 MHz
f = 1.0 MHz
P_G
η_C
V_CE = 28 V
P_OUT = 7.0 W
f = 470 MHz
NONE
MINIMUM TYPICAL MAXIMUM
65
65
33
4.0
10
UNITS
V
V
V
V
---
1.2
GHz
14
pF
60
pF
8.5
9.0
dB
60
75
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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