BLX65S Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

ASI BLX65S
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION
The ASI BLX65S is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency
Range.
FEATURES INCLUDE:
• Economical TO-39 Package
• 8 dB Typical Gain
• Emitter Ballasting
MAXIMUM RATINGS
I_C
750 mA
V_CBO
P_DISS
T_J
T_STG
θ_JC
36 V
5.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
35 ^OC / W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)
CHARACTERISTICS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 15 V
h_FE
V_CB = 5.0 V I_C = 50 mA
C_OB
V_CB = 12.5 V
f = 1.0 MHz
G_PE
V_CE = 12.5 V P_OUT = 2.0 W f = 470 MHz
η_C
MINIMUM
16
36
2.5
20
7.0
NONE
TYPICAL MAXIMUM
1.0
200
15
55
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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