BLX39 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLX39
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX39 is Designed for
broadband amplifier operations up to
175 MHz.
FEATURES:
• P_G = 7.6 dB min. at 40 W/175 MHz
• Emitter Resistors Ballasted
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
5.0 A
V_CB
65 V
V_CE
35 V
P_DISS
60 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.9 °C/W
PACKAGE STYLE .380 STUD
.112x45°
A
B
C
E
E
ØC
B
D
#8-32 UNC-2A
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
M A X IM U M
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
65
4.0
5
10
100
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
65
pF
P_G
7.6
dB
η_C
V_CE = 28 V
P_IN = 7.0 W
f = 175 MHz
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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