BLX15 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASI BLX15
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX15 is a Common Emitter
Device Designed for High Linearity
Class A/AB HF Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
10 A
V_CB
P_DISS
T_J
T_STG
θ_JC
110 V
233 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
0.75 ^OC/W
PACKAGE STYLE .550 4L STUD
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CBO
I_C = 100 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 6.0 V
I_C = 1.4 A
MINIMUM TYPICAL MAXIMUM
55
110
4.0
15
50
UNITS
V
V
V
---
P_g
IMD₃
η_C
C_ob
V_CE = 50 V
I_cq = 100 mA
P_out = 150 W(PEP)
V_CB = 50 V
14
f = 30 MHz
---
37
f = 1.0 MHz
---
---
dB
-37
-30
dBc
45
---
%
220
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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